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2SK2247
Silicon N-Channel MOS FET
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
UPAK 21 4
3
D G 1. Gate 2. Drain 3. Source 4. Drain S
2SK2247
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 30 20 2 4 2 1 150 -55 to +150
Unit V V A A A W C C
Notes 1. PW 100 s, duty cycle 10 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7mm) 3. Marking is "QY"
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 30 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf 1.5 -- -- -- -- -- -- -- Typ -- -- -- -- 1.5 0.3 0.22 1.9 177 116 43 8 14 37 33 Max -- -- 5 1 2.0 0.45 0.35 -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns Test conditions I D = 1 mA, VGS = 0 I G = 10 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 24 V, VGS = 0 I D = 100 A, VDS = 10 V ID = 1 A VGS = 4 V*1 ID = 1 A VGS = 10 V*1 ID = 1 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 PW = 2 s
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on)
2
2SK2247
Power vs. Temperature Derating 1.6 Channel Dissipation Pch** (W) (** on the almina ceramic board) I D (A) 10 3 1 0.3 0.1 0.03 0.01 0.1 Ta = 25 C 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Maximum Safe Operation Area
1
PW
1.2
m
s
= 10 m s
C D
(1
Drain Current
O
sh
n tio ra pe
0.8
ot
Operation in this area is limited by R DS(on)
)
0.4
0
50
100
150 Ta (C)
200
Ambient Temperature
Typical Output Characteristics 5 5.5 V I D (A) 4 5V 4.5 V Ta = 25 C Pulse Test 4V (A) 5
Typical Transfer Characteristics V DS = 10 V Pulse Test
4
3 3.5 V
ID Drain Current
Drain Current
3
2
2 75 C Ta = -25 C 25 C 0 1 2 3 Gate to Source Voltage 4 5 V GS (V)
1
3V V GS = 2.5 V
1
0
1 2 3 Drain to Source Voltage
4 5 V DS (V)
3
2SK2247
Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage V DS(on) (V) 0.5 Pulse Test Ta = 25 C 0.4 Static Drain to Source State Resistance vs. Drain Current Ta = 25 C Pulse Test
10 5 2 1 0.5
0.3 I D= 2 A 1A 0.5 A 0 4 8 12 Gate to Source Voltage 16 20 V GS (V)
0.2
VGS = 4 V 0.2 0.1 0.1 10 V 0.2 0.5 1 Drain Current 2 5 I D (A) 10
0.1
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 1.0
Forward Transfer Admittance vs. Drain Current 10 5 Ta = -25 C 2 1 0.5 75 C 25 C
0.8
0.6
I D= 2 A 1A VGS = 4 V 0.5 A 0.5, 1, 2 A 10 V
0.4
0.2 0 -40
0.2 0.1 0.1
V DS = 10 V Pulse Test 0.2 0.5 1 2 5 10
0 40 80 120 160 Case Temperature Tc (C)
Drain Current I D (A)
4
2SK2247
Typical Capacitance vs. Drain to Source Voltage 1000 200 100 Switching Time t (ns) Ciss 100 Coss Crss 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50 2 0.05 0.1 50 t d(off) tf t d(on) tr V GS = 10 V, PW = 2 s V DD = 30 V, duty < 1 % 0.2 0.5 Drain Current 1 2 I D (A) 5
Switching Characteristics
Capacitance C (pF)
20 10 5
1
Drain to Source Voltage V DS (V)
Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test Reverse Drain Current I DR (A) 4
3 10 V 2 5V 1 V GS = 0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V SD (V)
5
Unit: mm
4.5 0.1
0.4
1.8 Max 1
1.5 0.1 0.44 Max (2.5)
(1.5)
1.5 1.5 3.0
0.8 Min
0.44 Max
Hitachi Code JEDEC EIAJ Weight (reference value)
(0.4)
0.53 Max 0.48 Max
2.5 0.1 4.25 Max
UPAK -- Conforms 0.050 g
(0.2)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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